材料科学
纳米晶材料
正交晶系
电阻率和电导率
薄膜
分析化学(期刊)
带隙
相(物质)
拉曼光谱
纳米技术
结晶学
晶体结构
光学
光电子学
化学
物理
工程类
有机化学
电气工程
色谱法
作者
Yogesh Shinde,P.N. Sonone,Rekha K Kendale,Pankaj Koinkar,A.U. Ubale
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2020-10-14
卷期号:32 (2): 025602-025602
被引量:1
标识
DOI:10.1088/1361-6528/abba9b
摘要
Nanostructured Sb2O3 thin films have been deposited onto glass substrates by using the chemical spray pyrolysis technique, and the effect of precursor solution volume on the physical properties was investigated for the first time. The prepared films were characterized in detail by using x-ray diffraction, field-emission scanning electron microscopy with energy dispersive x-ray analysis (FESEM-EDAX), UV-vis absorption and transmission spectroscopy, Raman spectroscopy analysis and electrical resistivity measurement. X-ray diffraction analysis shows that the senarmontite cubic phase is completely transferred to the valentinite orthorhombic phase as the precursor solution volume is increased. This phase transformation as a function of precursor volume is discussed in detail. The FESEM-EDAX analysis reconfirms the phase change showing well-defined nano-dimensional cubic hexagonal and orthorhombic octahedral morphologies with excellent stoichiometry. The optical property studies show that the bandgap energy of Sb2O3 varies from 3.43-3.98 eV as a function of precursor quantity. The as-grown Sb2O3 thin films are semiconducting in nature. The measured values of electrical resistivity and activation energy are found to be dependent on the spray solution volume. The electrical resistivity of deposited Sb2O3 thin films shows variation from 26.15 × 102-34.27 × 102 Ω cm and the activation energy of the films is in the order of 0.763-0.773 eV.
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