神经形态工程学
数码产品
计算机科学
可穿戴技术
计算机体系结构
非易失性存储器
电阻随机存取存储器
计算机数据存储
可穿戴计算机
嵌入式系统
计算机硬件
电气工程
工程类
人工智能
人工神经网络
电压
作者
Dongshin Kim,Ik‐Jyae Kim,Jang‐Sik Lee
标识
DOI:10.1002/aisy.202000206
摘要
Recently, consumer electronics have moved toward data‐centric applications due to the development of smart electronic devices. Moreover, electronic devices have become highly portable, wearable, and lightweight. These devices require flexible data storage with high density. Furthermore, with the growing demand for larger memory capacity, faster processing speed, and complex data computation, neuromorphic devices have emerged as the next‐generation memory technologies. To meet the needs of next‐generation memory devices, memory devices based on emerging materials such as 2D, electrochemical, and perovskite materials are suggested. Herein, the recent progress in emerging materials‐based memory devices for flexible and neuromorphic device applications is reviewed. First, the functions and mechanisms of emerging material‐based memory devices are described. Second, applications for emerging material‐based memory devices are reviewed. Finally, the challenges and prospects for the emerging material‐based memory devices are discussed.
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