Novel Doping Engineering Techniques for Gallium Oxide MOSFET to Achieve High Drive Current and Breakdown Voltage

Using TCAD simulation, we studied channel and source/drain extension doping and length optimization on lateral normally-ON Ga2O3junction-less power transistor. A novel gradual channel doping technique under the gate is then proposed with low doping at the source side (for strong gate control and high BV) and high doping on the drain side (for low ON state resistance). By combing the optimization techniques, it is showed that on-state current (ION) can be increased by 650% without degrading the breakdown voltage (BV). A process flow utilizing shadow implantation is also proposed and simulated to achieve lateral gradual channel doping and showed to be promising.