Molecular-Dynamics Simulation of Silicon Irradiation with Low-Energy Noble Gas Ions

Simulation of the irradiation of crystalline silicon with low-energy (50—500 eV) noble-gas ions (He, Ne, Ar, Kr, Xe) is performed using the molecular-dynamics method with damage accumulation. The analysis of structural changes in the near-surface layers of the material demonstrates significant differences between the mechanisms of silicon damage by light and heavy particles. It is shown that, under material irradiation with Xe ions and especially with He ions, the largest clusters are formed by atoms implanted in the material.