GaN and digital electronics: A way out of Moore's law?

Abstract After forty years following Moore's law, Si digital electronics is reaching its limits, both in performance and in economic viability. In this paper we describe how nitride semiconductors can be combined with Si electronics to allow electronics to move beyond Moore's law and to enable new functionality. Three different research areas will be discussed: high performance digital circuits, high temperature electronics and heterogeneous integration of nitride and Si electronics. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)