带通滤波器
衰减器(电子)
插入损耗
单片微波集成电路
宽带
高电子迁移率晶体管
材料科学
拓扑(电路)
电气工程
带宽(计算)
衰减
电子工程
光电子学
电压
工程类
晶体管
物理
放大器
CMOS芯片
电信
光学
作者
S.M. Daoud,Prasad N. Shastry
出处
期刊:IEEE Transactions on Microwave Theory and Techniques
日期:2006-06-01
卷期号:54 (6): 2576-2583
被引量:17
标识
DOI:10.1109/tmtt.2006.872920
摘要
The theory, analysis, and systematic design guidelines for a novel wideband monolithic bandpass pi-network voltage controlled attenuator (VCA) are presented. A 24-32-GHz VCA was designed and manufactured using 0.15-mum GaAs pseudomorphic high electron-mobility transistor (pHEMT) technology. This is the first reported VCA to use a bandpass filter topology to achieve the required operating frequency band and eliminate the effects of parasitic capacitances of the pHEMTs. The bandpass filter absorbs the parasitic capacitances and thereby eliminates their detrimental effects. The measured attenuation dynamic range is 12 dB plusmn 0.5 dB with minimum insertion loss of 2-3 dB. The input power handling capability is up to 0 dBm. The VCA is well matched and may be placed in a 50-Omega system
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