Energy band alignment of SnO 2 /SrTiO 3 epitaxial heterojunction studied by X‐ray photoelectron spectroscopy

(200) SnO 2 //(111) SrTiO 3 (STO) epitaxial heterojunctions were fabricated using the laser molecular epitaxy technique. Sharp junction interface was confirmed by the high‐resolution transmission electron microscopy. The valence band offset and conduction band offset of the SnO 2 /STO heterojunction were determined to be 0.85 ± 0.20 and 0.45 ± 0.20 eV using XPS, respectively. It is found that a type‐II band alignment forms at the SnO 2 /STO interface. Copyright © 2015 John Wiley & Sons, Ltd.