Temperature dependence of the band-band absorption coefficient in crystalline silicon from photoluminescence

The band-band absorption coefficient in crystalline silicon has been determined using spectral photoluminescence measurements across the wavelength range of 990–1300 nm, and a parameterization of the temperature dependence has been established to allow interpolation of accurate values of the absorption coefficient for any temperature between 170 and 363 K. Band-band absorption coefficient measurements across a temperature range of 78–363 K are found to match well with previous results from MacFarlane et al. [Phys. Rev. 111, 1245 (1958)], and are extended to significantly longer wavelengths. In addition, we report the band-band absorption coefficient across the temperature range from 270–350 K with 10 K intervals, a range in which most practical silicon based devices operate, and for which there are only sparse data available at present. Moreover, the absorption coefficient is shown to vary by up to 50% for every 10 K increment around room temperature. Furthermore, the likely origins of the differences among the absorption coefficient of several commonly referenced works by Green [Sol. Energy Mater. Sol. Cells 92, 1305 (2008)], Daub and Würfel [Phys. Rev. Lett. 74, 1020 (1995)], and MacFarlane et al. [Phys. Rev. 111, 1245 (1958)] are discussed.