Planar Ultraviolet Photodetectors Formed by Si Implantation into p-GaN

Planar GaN-based photodetectors were formed through Si implantation into p-GaN. When the reverse bias was below , the photodetectors showed nearly constant dark current around . The dark current was somewhat higher as compared to the dark current observed in conventional epitaxial grown p-i-n photodiodes. Increase in dark current may be due to the incomplete damage (induced by implantation) removal. Spectral response measurements revealed that peak responsivity was around at for the planar UV photodetectors with a reverse bias of . It was also found that visible -to-UV rejection ratio was around 700.