材料科学
栅极电介质
薄膜晶体管
电介质
光电子学
无定形固体
铟
晶体管
俘获
宽禁带半导体
电压
纳米技术
电气工程
图层(电子)
化学
工程类
生物
有机化学
生态学
作者
Chan-Yong Jeong,Daeun Lee,Sang-Hun Song,In-Tak Cho,Jong‐Ho Lee,Eou‐Sik Cho,Hyuck‐In Kwon
摘要
We investigate the border traps in amorphous indium-gallium-zinc oxide thin-film transistors with SiOX and SiNX interfacial gate dielectrics. Border traps have been known as trapping centers of electronic carriers in field-effect transistors, and non-negligible hysteresis is observed in the bidirectional high-frequency capacitance-voltage curve with a slow ramp rate in both dielectric devices. From the gate voltage transient method and 1/f noise analysis, the spatially and energetically uniform trap distribution is obtained, and approximately four to five times higher border trap densities are extracted from SiNX dielectric devices than from the SiOX dielectric ones.
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