材料科学
单层
光电子学
光电二极管
二硫化钼
堆积
吸收(声学)
光致发光
法布里-珀罗干涉仪
二硫化钨
光子学
同质结
纳米技术
兴奋剂
波长
化学
冶金
有机化学
复合材料
作者
Xinbo Wang,Jun Guo,Zijing Ding,Dianyu Qi,Jizhou Jiang,Zhuo Wang,Wei Chen,Yuanjiang Xiang,Wenjing Zhang,Andrew Thye Shen Wee
出处
期刊:Nano Letters
[American Chemical Society]
日期:2017-11-14
卷期号:17 (12): 7593-7598
被引量:48
标识
DOI:10.1021/acs.nanolett.7b03579
摘要
Monolayer two-dimensional (2D) transition metal dichalcogenides (TMDs) show interesting optical and electrical properties because of their direct bandgap. However, the low absorption of atomically thin TMDs limits their applications. Here, we report enhanced absorption and optoelectronic properties of monolayer molybdenum disulfide (MoS2) by using an asymmetric Fabry-Perot cavity. The cavity is based on a hybrid structure of MoS2/ hexagonal boron nitride (BN)/Au/SiO2 realized through layer-by-layer vertical stacking. Photoluminescence (PL) intensity of monolayer MoS2 is enhanced over 2 orders of magnitude. Theoretical calculations show that the strong absorption of MoS2 comes from photonic localization on the top of the microcavity at optimal BN spacer thickness. The n/n+ MoS2 homojunction photodiode incorporating this asymmetric Fabry-Perot cavity exhibits excellent current rectifying behavior with an ideality factor of 1 and an ultrasensitive and gate-tunable external photo gain and specific detectivity. Our work offers an effective method to achieve uniform enhanced light absorption by monolayer TMDs, which has promising applications for highly sensitive optoelectronic devices.
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