碳纳米管
纳米
纳米技术
材料科学
千分尺
晶体管
纳米管
碳纳米管场效应晶体管
电导
纳米尺度
光电子学
场效应晶体管
纳米电子学
电气工程
复合材料
物理
光学
电压
凝聚态物理
工程类
作者
Qing Cao,J. Tersoff,Damon B. Farmer,Yu Zhu,Shu Jen Han
出处
期刊:Science
[American Association for the Advancement of Science (AAAS)]
日期:2017-06-30
卷期号:356 (6345): 1369-1372
被引量:191
标识
DOI:10.1126/science.aan2476
摘要
Carbon nanotubes on the roadmap The formal challenge for high-performance transistors is to fit within ever smaller devices. They need to shrink from a lateral dimension of about 100 to 40 nanometers. Cao et al. fabricated tiny devices by using a single semiconducting carbon nanotubes, as well as arrays of these nanotubes. High performance (a high saturation on-state current >1.2 milliamperes per micrometer and a conductance >2 millisiemens per micrometer) was delivered by making end-bonded contacts to the nanotubes with cobalt-molybdenum alloys. Science , this issue p. 1369
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