材料科学
掺杂剂
钙钛矿(结构)
能量转换效率
侧链
化学工程
层状结构
图层(电子)
聚合物
烷基
纳米技术
兴奋剂
光电子学
复合材料
有机化学
化学
工程类
作者
Luozheng Zhang,Chang Liu,Xingzhu Wang,Yanqing Tian,Alex K.‐Y. Jen,Baomin Xu
标识
DOI:10.1002/adfm.201904856
摘要
Abstract A variety of dopant‐free hole‐transporting materials (HTMs) is developed to serve as alternatives to the typical dopant‐treated ones; however, their photovoltaic performance still falls far behind. In this work, the side chain of a polymeric HTM is engineered by partially introducing diethylene glycol (DEG) groups in order to simultaneously optimize the properties of both the bulk of the HTM layer and the HTM/perovskite interface. The intermolecular π–π stacking interaction in the HTM layer is unexpectedly weakened after the incorporation of DEG groups, whereas the lamellar packing interaction is strengthened. A doubled hole mobility is obtained when 3% of the DEG groups replace the original alkyl side chains, and a champion power conversion efficiency (PCE) of 20.19% (certified: 20.10%) is then achieved, which is the first report of values over 20% for dopant‐free organic HTMs. The device maintains 92.25% of its initial PCE after storing at ambient atmosphere for 30 d, which should be due to the enhanced hydrophobicity of the HTM film.
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