材料科学
纳米技术
介电谱
光电流
氮化物
碳纳米管
光电子学
化学
电极
电化学
图层(电子)
物理化学
作者
Qiushi Ruan,Wenjun Luo,Jijia Xie,Yiou Wang,Xu Liu,Zhiming Bai,Claire J. Carmalt,Junwang Tang
标识
DOI:10.1002/anie.201703372
摘要
A metal-free photoanode nanojunction architecture, composed of B-doped carbon nitride nanolayer and bulk carbon nitride, was fabricated by a one-step approach. This type of nanojunction (s-BCN) overcomes a few intrinsic drawbacks of carbon nitride film (severe bulk charge recombination and slow charge transfer). The top layer of the nanojunction has a depth of ca. 100 nm and the bottom layer is ca. 900 nm. The nanojunction photoanode results into a 10-fold higher photocurrent than bulk graphitic carbon nitride (G-CN) photoanode, with a record photocurrent density of 103.2 μA cm−2 at 1.23 V vs. RHE under one sun irradiation and an extremely high incident photon-to-current efficiency (IPCE) of ca. 10 % at 400 nm. Electrochemical impedance spectroscopy, Mott–Schottky plots, and intensity-modulated photocurrent spectroscopy show that such enhancement is mainly due to the mitigated deep trap states, a more than 10 times faster charge transfer rate and nearly three times higher conductivity due to the nanojunction architecture.
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