Comparison of thermal properties between Si and SiC power MOSFET using electro-thermal analysis

This paper describes comparison of thermal properties between Si power MOSFET and SiC power MOSFET. Conventionally, Si power MOSFET has been widely used in power electronics area. On the other hand, SiC power MOSFET has wide band gap, and is gaining attention as a new generation power device. However, thermal properties of SiC power MOSFET has not been clear. For appropriate thermal management of SiC power MOSFET, heat generation tendency and temperature rise of the device should be investigated. In this paper, we conducted numerical simulation to investigate thermal properties of SiC power MOSFET. Electro-Thermal Analysis was employed as simulation method. We compared temperature between Si power MOSFET and SiC power MOSFET, and discussed difference of heat generation and temperature between these two devices.