电极
非阻塞I/O
材料科学
氧化物
图层(电子)
光电子学
金属
钙钛矿太阳能电池
纳米技术
化学
冶金
催化作用
生物化学
物理化学
作者
Sonia Rani,Arun Kumar,Dhriti Sundar Ghosh
出处
期刊:Solar RRL
[Wiley]
日期:2023-01-18
卷期号:7 (7)
被引量:7
标识
DOI:10.1002/solr.202200863
摘要
Oxide–metal–oxide (OMO)‐based stacks are highly attractive by virtue of their favorable properties for being used as a top transparent electrode (TE) in semitransparent solar cells. Herein, getting the best trade‐off between performance and transparency is focused on by optimizing the OMO electrode and the device layers with the help of optical simulation. NiO/Ag/SnO 2 as the OMO electrode integrated into a device having SnO 2 , Spiro‐OMeTAD, and MAPbI 3 as the electron transport layer, hole transport layer, and photoactive layer, respectively, in n–i–p geometry is investigated. It is shown that an optimized OMO electrode in terms of average visible transparency (AVT) does not translate to the best device performance. It is found that for the overcoat to undercoat oxide layer ratio of 1.17, a maximum short‐circuit current density ( J SC ) of 4.34 mA cm −2 is achieved while a maximum AVT of 21.55% is obtained for a ratio of 0.78. On further optimization of the MAPbI 3 thickness, for an oxide ratio of 1, a modeled device with 4.58 mA cm −2 with AVT of 31.55% is demonstrated. In addition, it is also found that by integrating an optical spacer layer after the OMO electrode, the J SC of the device shows a jump of >115% to 9.86 mA cm −2 .
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