神经形态工程学
材料科学
记忆电阻器
光子学
纳米技术
电子皮肤
光电子学
电子工程
人工神经网络
计算机科学
人工智能
工程类
作者
Dingchen Wang,Shilei Dai,Anran Yuan,Songrui Wei,Xiao Tang,Kunbin Huang,Bin‐Bin Cui,Dingyao Liu,Leiwei He,Shaocong Wang,Xi Chen,Hegan Chen,Jia Huang,Han Zhang,Shiming Zhang,Zhongrui Wang
标识
DOI:10.1002/adfm.202419937
摘要
Abstract The development of skin‐like optical memristors is crucial for wearable photonic neuromorphic computing, which enables ultrafast artificial neural networks for edge information processing. However, most existing optical memristors are made of rigid materials, posing challenges in integrating with soft photonic sensors and increasing the risk of device failure under large strains. Additionally, the strain‐perturbed photonic matrix‐vector multiplier (PMVM) may malfunction when stretched. In this paper, a design strategy that utilizes transverse surface colorization (TSC) of hydrogel waveguides is presented to create stretchable optical memristors that can implement a strain‐invariant PMVM. These stretchable optical memristors provide more than 4‐bit distinct, non‐volatile memory states (>10 4 s). By utilizing stretchable optical memristors as bending sensors and strain‐invariant PMVM, an integrated photonic near‐sensor neuromorphic skin capable of real‐time hand gesture recognition (latency < 0.5 ns) is demonstrated with 95.5% accuracy even under 30% strain. This seamless integration of sensing, memory, and processing capabilities in a photonic near‐sensor neuromorphic skin paves the way for future wearable photonics.
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