Localized Tunneling 1D Perovskitoid Passivated Contacts for Efficient and Stable Perovskite Solar Modules

Abstract Interface engineering has proven to be an effective approach for passivating interfacial imperfections to mitigate non‐radiative recombination, but the subpar interface quality between the perovskite and the charge transport layer has hindered advancements in charge extraction and transport. Herein, localized tunneling passivated contacts are presented using self‐assembled one‐dimensional (1D) perovskitoid through an in situ reaction between1‐ethyl‐2‐methylpyridinium iodide ([EtMePy]I) and PbI 2 . The formation of a uniform conformal layer and a non‐continuous distribution of 1D [EtMePy]PbI 3 perovskitoid crystals serves as a localized tunneling contact at the interface between the perovskite and the hole transport layer, which suppresses interfacial non‐radiative recombination and facilitates spatial separation of carriers. The optimized perovskite solar modules achieve a power conversion efficiency of 22.54% and a high fill factor of 80.0% with an aperture area of 29.0 cm 2 . The encapsulated device retains 90.4% of its initial PCE after ≈1,000 h of maximum power point tracking at 85 °C and 85% relative humidity (RH) under 1.0 Sun illumination.