Investigation of high speed β-Ga2O3 growth by solid-source trihalide vapor phase epitaxy

Abstract Trihalide vapor phase epitaxy (THVPE) is a new type of halide vapor phase epitaxy (HVPE) that uses GaCl 3 as a group III source, enabling Ga 2 O 3 growth without particle generation, although the growth rate is low. In this study, β -Ga 2 O 3 is grown by THVPE using solid GaCl 3 as a group III precursor. The growth rate increases linearly with increasing partial pressure of the precursor. The dependence of the growth rate on the VI/III ratio is revealed on sapphire substrates, with the growth rate reaching a maximum at a VI/III ratio of 95. We have also obtained a growth rate of 32.2 μ m h −1 on β -Ga 2 O 3 (001) substrates with no particle generation, crystal quality equivalent to that of the substrate, and high purity equivalent to that of HVPE.