Parallel communication with InGaN/GaN micro-LEDs using a CMOS compatible approach

InGaN/GaN µLEDs are a promising candidate to visible optical communication applications thanks to their high luminosity and high bandwidth. High data rate are reachable by using them as an array to realize parallel communication. To optimize their integration, we propose a CMOS compatible process to make the µLEDs directly on top of an ASIC and to use them as emitter and fast photodetector. We have demonstrated functional µLEDs on a 200mm silicon substrate and frequency characterization were performed for both emission and reception.