Diffusion bonding of the C/SiC ceramic matrix composite

C/SiC composites are one of the high temperature materials that have extensive applications. Diffusion bonding appeared to be the potential technique for joining the C/SiC composite. A detailed microstructural study was carried out for the diffusion bonding of the C/SiC composite. The sequence of the reaction layer was found to be Ti 5 Si 3 /Ti 5 Si 3 + TiC/TiC after bonding at 1350°C using a vacuum hot press. After the diffusion bonding at 1500°C, the reaction layer sequence was changed to TiSi 2 /Ti 3 SiC 2 + TiSi 2 /Ti 3 SiC 2 + TiSi 2 + TiC. The apparent shear strength of diffusion bonded C/SiC was higher for the sample bonded at 1350°C than at 1500°C.