Achieving Zero‐Temperature Coefficient Point Behavior by Defect Passivation for Temperature‐Immune Organic Field‐Effect Transistors

Abstract Organic field‐effect transistors (OFETs) have broad prospects in biomedical, sensor, and aerospace applications. However, obtaining temperature‐immune OFETs is difficult because the electrical properties of organic semiconductors (OSCs) are temperature‐sensitive. The zero‐temperature coefficient (ZTC) point behavior can be used to achieve a temperature‐immune output current; however, it is difficult to achieve in organic devices with thermal activation characteristics, according to the existing ZTC point theory. Here, we eliminate the Fermi pinning in OSCs using the defect passivation strategy, making the Fermi level closer to the tail state at low temperatures; thus threshold voltage ( V T ) is negatively correlated with temperature. ZTC‐point behaviors in OFETs are achieved by compensation between V T and mobility at different temperatures to improve its A temperature‐immune output current can be realized in a variable‐temperature bias voltage test over 50000 s by biasing the device at the ZTC point. This study provides an effective solution for temperature‐immune OFETs and inspiration for their practical application. This article is protected by copyright. All rights reserved