Performance Analysis of Double Gate MOSFET with High-k Dielectric

In this paper, conventional and double gate with silicon nitride (SiN) and silicon oxide (SiO 2 ) as gate oxide is analyzed. The gate oxide thickness is scaled such that equivalent oxide thickness remains same. The outcomes of NMOS, NMOS with nitride, Double gate MOSFET and Double gate MOSFET with nitride are compared The DG MOSFET with high-k exhibits 2.15% lower threshold voltage and 11.77% lower leakage current than DG MOSFET with silicon oxide. The DG MOSFET with nitride shows an excellent performance in comparison to other devices. This is beneficial for the low power applications.