微晶
升华(心理学)
酞菁
结晶度
载流子
材料科学
钴
衍射
结晶学
电子迁移率
分析化学(期刊)
化学
纳米技术
光电子学
光学
有机化学
冶金
物理
心理学
心理治疗师
作者
Dmitry Bonegardt,A. S. Sukhikh,Darya Klyamer,Pavel S. Popovetsky,Tamara V. Basova
标识
DOI:10.1134/s0022476622090025
摘要
We present a comparative study of structural features and charge carrier mobilities in the films of cobalt phthalocyanine with F-substituents in peripheral (CoPcF4-p) and non-peripheral positions of the phthalocyanine ring (CoPcF4-np). The films are prepared by thermal sublimation in a vacuum. It is shown by powder X-ray diffraction and atomic force microscopy that polycrystalline films CoPcF4-p and CoPcF4-np with a preferential crystallite orientation relative to the substrate surface are formed upon the deposition. Despite the fact that the CoPcF4-np film has a higher crystallinity than the CoPcF4-p film, the transistor based on the former demonstrates a two orders lower charge carrier mobility than that of the latter.
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