动力循环
口译(哲学)
阈值电压
功率(物理)
电气工程
电压
MOSFET
拓扑(电路)
功率MOSFET
理论(学习稳定性)
物理
材料科学
计算机科学
光电子学
热力学
工程类
晶体管
可靠性(半导体)
机器学习
程序设计语言
作者
Christian Schwabe,Xing Liu,Tobias N. Wassermann,Paul Salmen,Thomas Basler
标识
DOI:10.1109/irps48203.2023.10118274
摘要
The gate-oxide processing for SiC MOSFET devices is challenging and can lead to pronounced trapping effects at the $\mathbf{SiC}/\mathbf{SiO}_{2}$ interface, which then can induce threshold voltage instabilities during switching and other long-term tests. This effect can influence the $\mathbf{R_{DS, on}}$ , if the channel is not completely closed, and also the temperature determination by the $\mathbf{V}_{\mathbf{S}\mathbf{D}}(\mathbf{T})$ method. This paper presents a special measurement circuit for a live threshold voltage measurement during power cycling to study these issues during lifetime testing. The influence on the lifetime determination during power cycling is evaluated and can be in parts neglected for state-of-the-art devices. Even though high temperatures are present, the number of power cycles and respectively the time under a certain gate voltage is not sufficient to induce a reasonable gate threshold shift. For the investigated devices a negative influence on the lifetime testing and results interpretation can hence be ruled out.
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