Direct Mapping of Crystallization-Induced Trap-State Modulation and Its Impact on Local Carrier Mobilities in Indium Oxide Thin-Film Transistors

devices achieved higher mobility, more positive threshold voltage, and improved bias stability, confirming reduced deep-trap activity and enhanced charge-transport uniformity. This work establishes a direct link between structural ordering, local trap-depth modulation, and macroscopic electrical performances of crystalline oxide channels.