Challenges and Opportunities of Oxide-semiconductor Channel Transistor DRAM (OCTRAM)

The unprecedented advancement of Artificial Intelligence technology is driving the intensive development of memory devices, especially Dynamic Random Access Memory (DRAM), which is the key component in high performance computing architecture. In this context, oxide semiconductor is attracting considerable attention thanks to its distinctive materials characteristics such as ultra-low leakage current and immunity to floating body effect. This paper explores the opportunities and challenges of oxide semiconductor channel transistor DRAM (OCTRAM), with demonstrating promising characteristics of sub-30nm diameter IGZO vertical channel transistor.