Band-to-band recombination in Ga0.5In0.5P

The recombination kinetics of the electron-hole plasma in strongly excited, undoped Ga0.5In0.5P are investigated at 300 and 150 K by time-resolved photoluminescence measurements using line-shape analysis of transient spectra. Radiative recombination dominates, and no influence of the Auger effect is observed up to our highest carrier concentration of 1.5×1019 cm−3. Random alloy and ordered samples have the same recombination rate. The radiative recombination coefficients are found to be (1.0±0.3)×10−10 and (4±1)×10−10 cm3 s−1 at 300 and 150 K, respectively. An upper limit for the Auger coefficient is 3×10−30 cm6 s−1 at 300 K.