Millisecond response time measurements of high temperature gas sensors
作者
Peter S. Tobias,Hui Hu,Manoochehr Koochesfahani,Amar N. Ghosh
标识
DOI:10.1109/icsens.2004.1426282
摘要
We present a new apparatus for measuring the response times of a gas sensor with millisecond resolution, while also capturing the slower components of the response such as the steady state value. Laser induced fluorescence (LIF) imaging was used to quantify the exchange rate of the sensor's ambient gas. The millisecond response of high temperature (up to 950 K) field effect SiC sensors for detection of hydrogen containing gases was characterized.