Controllability of luminescence wavelength from GeSn wires fabricated by laser-induced local liquid phase crystallization on quartz substrates

Abstract We examined the effects of the laser scan speed and power on the Sn fraction and crystallinity of GeSn wires of 1 μ m width and 1 mm length fabricated by laser-induced local liquid phase crystallization on quartz substrates. The Sn fraction increased from 1% to 3.5% with an increasing scan speed from 5 to 100 μ m s −1 , corresponding to a luminescence wavelength of 1770–2070 nm. This result can be interpreted as the scan speed dependence of the non-equilibrium degree during crystal growth. The increase in the laser power reduced the Sn fraction and caused a blue shift in the luminescence wavelength. We discuss these phenomena based on the growth kinetics of zone melting.