Achieving Different Stoichiometries and Morphologies in Vapor Phase Deposition of Inorganic Halide Perovskites: Single or Dual Precursor Sources?

Inorganic halide perovskites have become attractive for many optoelectronic applications due to their outstanding properties. While chemical synthesis techniques have been successful in producing high-quality perovskite crystals, scaling up to wafer-scale thin films remains challenging. Vapor deposition methods, particularly physical vapor deposition and chemical vapor deposition, have emerged as potential solutions for large-scale thin film fabrication. However, the control of phase purity during deposition remains problematic. Here, we investigate single-source (CsPbBr3) and dual-source (CsBr and PbBr2) vapor deposition techniques to achieve phase-pure CsPbBr3 thin films. Utilizing Knudsen Effusion Mass Spectrometry, we demonstrate that while the single-source CsPbBr3 evaporation is partially congruent, it leads to compositional changes in the evaporant over time. The dual-source evaporation, with a precise control of the PbBr2/CsBr flux ratio, can improve phase purity, particularly at elevated substrate temperatures at excess PbBr2 conditions. Our results give direct evidence that the growth is CsBr-limited. Overall, our findings provide critical insights into the vapor phase deposition processes, highlighting the importance of evaporation conditions in achieving the desired inorganic perovskite stoichiometry and morphology.