自旋电子学
范德瓦尔斯力
反铁磁性
磁性
铁磁性
凝聚态物理
材料科学
兴奋剂
磁电阻
磁性半导体
物理
磁场
量子力学
分子
作者
Mingjie Wang,K. Zhu,Bingrong Lei,Yazhou Deng,Hu Tao,Dongsheng Song,Haifeng Du,Mingliang Tian,Ziji Xiang,Tao Wu,Xianhui Chen
出处
期刊:Nano Letters
[American Chemical Society]
日期:2024-03-27
卷期号:24 (14): 4141-4149
标识
DOI:10.1021/acs.nanolett.3c05148
摘要
Recently, van der Waals (vdW) antiferromagnets have been proposed to be crucial for spintronics due to their favorable properties compared to ferromagnets, including robustness against magnetic perturbation and high frequencies of spin dynamics. High-performance and energy-efficient spin functionalities often depend on the current-driven manipulation and detection of spin states, highlighting the significance of two-dimensional metallic antiferromagnets, which have not been much explored due to the lack of suitable materials. Here, we report a new metallic vdW antiferromagnet obtained from the ferromagnet Fe3GaTe2 by cobalt (Co) doping. Through the layer-number-dependent Hall resistance and magnetoresistance measurements, an evident odd–even layer-number effect has been observed in its few-layered flakes, suggesting that it could host an A-type antiferromagnetic structure. This peculiar layer-number-dependent magnetism in Co-doped Fe3GaTe2 helps unravel the complex magnetic structures in such doped vdW magnets, and our finding will enrich material candidates and spin functionalities for spintronic applications.
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