Al filament-induced unipolar resistive switching in sputtered Al-rich AlN memristors with low operating voltage and high memory window

s. The underlying mechanisms of resistive switching were explored through the analysis of the electrical performance, X-ray photoelectron spectroscopy (XPS) characterization, a variable temperature test and conduction mechanism studies. These analyses confirm that the electroformation of conductive filaments within Al-rich AlN films is responsible for the observed unipolar switching behavior. The fabricated unipolar memristors with low voltage and high on/off ratio hold great potential for future high-density multi-level arrays and low-voltage RRAM devices, offering promising prospects for efficient computing.