Computational fluid dynamics simulation of dual-showerhead configuration: Key to uniform large-scale chemical vapor deposition SiC coatings

During the preparation of large-scale silicon carbide (SiC) by halide chemical vapor deposition, the film uniformity is significantly sensitive to the reaction chamber configuration parameters. However, current research prioritizes the optimization of individual showerhead geometries or isolated gas distribution patterns, while systematic investigations into multi-showerhead modulation mechanisms remain notably absent. To address this problem, a nonequally spaced dual-showerhead design is proposed. A computational fluid dynamics model incorporating multiphysics coupling is established to systematically investigate the distinct regulatory effects exerted by single and dual showerheads on deposition dynamics. It is demonstrated that primary momentum dissipation induced by a single showerhead generates bipolar gas distribution patterns, achieving a 71.3% improvement in deposition uniformity. Convective heat transfer enhancement is achieved through secondary momentum dissipation in the dual-showerhead configuration, resulting in the uniformity coefficient being optimized to 0.15 and demonstrating a 34.8% improvement in deposition uniformity compared to the single configuration. The simulation results confirm that a highly uniform SiC thin film can be achieved through dual-showerhead configurations.