神经形态工程学
记忆电阻器
瓶颈
冯·诺依曼建筑
钙钛矿(结构)
联轴节(管道)
计算机科学
材料科学
光电子学
电阻式触摸屏
电阻随机存取存储器
电子工程
计算机体系结构
纳米技术
电压
工程物理
物理
工程类
电气工程
人工神经网络
人工智能
嵌入式系统
操作系统
冶金
化学工程
作者
Zijian Feng,Jintao Wang,Fandi Chen,Beining Dong,Xinyu Ma,Tingting Mei,Ni Yang,Xinwei Guan,Long Hu,Chun‐Ho Lin,Zhi Li,Tom Wu,Dewei Chu
标识
DOI:10.1002/smtd.202500089
摘要
Abstract Resistive switching memristor is an emerging nonvolatile memory technology designed to overcome the physical limitations of conventional systems and the performance bottleneck of the von Neumann architecture. Notably, halide perovskite (HP)‐based memristors have gained significant attention in recent years due to their unique ionic migration behavior and exceptional photoelectric properties. This review highlights HP‐based resistive switching, focusing on its recent developments in coupling light into memristors and discussing its implications for neuromorphic computing. The mechanisms of resistive switching are explored alongside the role of HP photoelectric properties in enhancing switching dynamics. The advantages and applications of light‐coupled resistive switching, including reduced switching voltage, enhanced operation reliability, multilevel switching capability, and the development of light‐integrated artificial synapses are discussed comprehensively. By fully harnessing the exceptional optoelectronic properties of HPs, this emerging field may pave the way for innovative approaches to memory technologies and light‐responsive neuromorphic systems.
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