Current transport mechanisms of metal/TiO2/β-Ga2O3 diodes

β-Ga2O3 is of great interest for power electronic devices with efficiency beyond current generation Si, 4H-SiC, and GaN devices due to its large breakdown electric field of ∼8 MV/cm. However, taking advantage of this large field strength in power diodes requires device engineering to reduce leakage current that arises at high electric fields. In this work, we elucidate the current transport mechanisms of metal/TiO2/β-Ga2O3 diodes, showing that thermionic emission is an excellent descriptor of current in forward and reverse bias. It is shown that tunneling current is greatly suppressed, and consequently, that the diodes with the TiO2 interlayer can block orders of magnitude more current than Schottky barrier diodes with the same barrier heights. Finally, a 1200 V diode structure is designed based on the derived transport models, and calculated on- and off-state current characteristics closely align with those of state-of-the-art 4H-SiC commercial devices, indicating that this diode structure is ready to enable the realization of β-Ga2O3 power diodes.