材料科学
异质结
光电子学
纳米线
量子点
光电探测器
光伏系统
硅
能量转换效率
纳米结构
纳米技术
生态学
生物
作者
Chao Xie,Biao Nie,Longhui Zeng,Feng‐Xia Liang,Mingzheng Wang,Lin‐Bao Luo,Mei Feng,Yongqiang Yu,Chunyan Wu,Yucheng Wu,Shu‐Hong Yu
出处
期刊:ACS Nano
[American Chemical Society]
日期:2014-03-26
卷期号:8 (4): 4015-4022
被引量:285
摘要
Silicon nanostructure-based solar cells have lately intrigued intensive interest because of their promising potential in next-generation solar energy conversion devices. Herein, we report a silicon nanowire (SiNW) array/carbon quantum dot (CQD) core-shell heterojunction photovoltaic device by directly coating Ag-assisted chemical-etched SiNW arrays with CQDs. The heterojunction with a barrier height of 0.75 eV exhibited excellent rectifying behavior with a rectification ratio of 10(3) at ±0.8 V in the dark and power conversion efficiency (PCE) as high as 9.10% under AM 1.5G irradiation. It is believed that such a high PCE comes from the improved optical absorption as well as the optimized carrier transfer and collection capability. Furthermore, the heterojunction could function as a high-performance self-driven visible light photodetector operating in a wide switching wavelength with good stability, high sensitivity, and fast response speed. It is expected that the present SiNW array/CQD core-shell heterojunction device could find potential applications in future high-performance optoelectronic devices.
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