The Ohmic Contact of 4H-SiC Power Devices by Pulse Laser Annealing and Rapid Thermal Annealing

The preparation of ohmic contact with high stability and low resistance is critical, and the quality of ohmic contact will directly affect the performance of devices as the efficiency, gain and switching speed. In this work, the I-V characteristic of the 4H-SiC devices under rapid thermal annealing and pulsed laser annealing were compared, the pulsed laser annealing process could obtain the lower ohmic contact resistant. The surface morphology, material composition, and elemental analysis were clarified by optical microscopy (OM), X-ray diffraction (XRD) and Energy Dispersive Spectroscopy (EDS), respectively. This research suggests that more Ni 2 Si and carbon vacancy can form at the interface under pulsed laser annealing.