单层
升华(心理学)
卤化物
二硒化钨
钨
化学气相沉积
碱金属
大气压力
化学
兴奋剂
电子迁移率
卤素
分析化学(期刊)
无机化学
材料科学
过渡金属
纳米技术
光电子学
有机化学
催化作用
心理治疗师
烷基
心理学
海洋学
地质学
作者
Shisheng Li,Shunfeng Wang,Dai‐Ming Tang,Weiqian Zhao,Huilong Xu,Leiqiang Chu,Yoshio Bandô,Dmitri Golberg,Goki Eda
标识
DOI:10.1016/j.apmt.2015.09.001
摘要
Chemical vapor deposition (CVD) of two-dimensional (2D) tungsten dichalcogenide crystals requires steady flow of tungsten source in the vapor phase. This often requires high temperature and low pressure due to the high sublimation point of tungsten oxide precursors. We demonstrate atmospheric pressure CVD of WSe2 and WS2 monolayers at moderate temperatures (700 ~ 850 oC) using alkali metal halides (MX where M= Na or K and X=Cl, Br or I) as the growth promoters. We attribute the facilitated growth to the formation of volatile tungsten oxyhalide species during growth, which leads to efficient delivery of the precursor to the growth substrates. The monolayer crystals were found to be free of unintentional doping with alkali metal and halogen atoms. Good field-effect transistor (FET) performances with high current on/off ratio ~10 7, hole and electron mobilities up to 102 and 26 cm2 V 1 s-1 for WSe2 and electron mobility of ~14 cm2 V-1 s-1 for WS2 devices were achieved.
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