Integrated atomic scale CD control and local variability reduction techniques

In patterning etch processes, the fabrication of multilayer films requires the precision of atomic scale X-Y CD controllability in complex hole patterns, and reduction of local variability such as Line Edge Roughness (LER), Line Width Roughness (LWR) and Local CDU (LCDU). In order to solve these requirements, we have developed Advanced Quasi-ALE technology which achieved reduction of LCDU, along with a wider X-Y CD control margin. In this paper, we introduce the three benefits of our atomic scale CD and variability control process technology; (1) XY CD control in oval patterns, (2) LCDU reduction and (3) wider etching window using Advanced Quasi-ALE technique. Hence, we will show that it has a significant potential to solve critical challenges in the patterning processes of N5 and beyond.