Enhanced spin polarization and valley polarization in monolayer MoS 2 junctions

junctions consisting of normal/ferromagnetic/normal parts. We found that for large incident angles the spin- and valley-dependent line-type resonances appear in the transmission and conductance spectra, which results in the transmission probabilities of spin-up and spin-down electrons at K and [Formula: see text] valleys being all improved to 100[Formula: see text] but for different special gate voltage. Therefore, both the spin and valley polarizations are increased, the perfect 100[Formula: see text] spin and valley polarizations are observed. Furthermore, the numbers of the line-type resonant peaks are multiplied with the increasing of the barrier's width. And the spin- and valley-polarized direction can be switched by changing the gate voltage. These intriguing features indicate that a valley or spin filter with high accuracy and efficiency can be designed, which is controllable by the electric field.