Demonstration of 1280 × 1024 long-wavelength infrared FPA with 10 μm pixel pitch based on InAs/GaSb type-II superlattice

• A LWIR 1280 × 1024 FPA with a pitch of 10 μm based on InAs/GaSb superlattice was demonstrated. • A long wavelength supperlattice material with low dark current density and high material uniformity was obtained. • A LWIR 1280 × 1024 FPA with low NETD, low operability and high non-uniformity was obtained. 1280 × 1024 format long-wavelength infrared focal plane array with 10 μm pixel pitch was fabricated based on InAs/GaSb type-II superlattice. At 70 K, the single-element device shows a 50% cutoff wavelength of 10.0 μm, peak quantum efficiency of 45.04% and peak detectivity of 1.87 × 10 11 cm·Hz 1/2 ·W −1 at 8.22 μm, the FPA infrared imaging performed an average noise equivalent temperature difference of 28.9 mK at 300 K background (F/3 optics) with an integration time of 1.12 ms and applied bias of −50 mV. The operability and non-uniformity of the FPA were 99.87% and 2.90% respectively, and it exhibits a stable residual non-uniformity below 0.1% of the dynamic range.