光电二极管
光电子学
X射线探测器
异质结
探测器
暗电流
材料科学
灵敏度(控制系统)
钙钛矿(结构)
光刻胶
二极管
光电探测器
制作
光学
物理
电子工程
化学
医学
结晶学
工程类
替代医学
病理
作者
Yong Cao,Yongshuai Ge,Xin Sha,Lingqiang Meng,Yong Gao,Bo Li,Xue-Feng Yu,Jia Li
出处
期刊:Flexible and printed electronics
[IOP Publishing]
日期:2022-03-01
卷期号:7 (1): 014013-014013
被引量:4
标识
DOI:10.1088/2058-8585/ac5b8e
摘要
Abstract Direct x-ray detectors are essential in many applications including medical tomography, security inspection, nondestructive testing, crystallography and astronomy. Despite the rapid advances in recent years, the currently available direct x-ray detectors are still limited by the insufficient photon-to-charge conversion, compromising the detection sensitivity, ease of fabrication, cost and flexibility. Here we demonstrate a device concept of heterojunction phototransistor with high internal-gain effect to realize the sensitive x-ray direct detection. Specifically, the heterojunction phototransistors are mainly composed of an industrially available In–Ga–Zn–O channel and all-inorganic perovskite nanocrystals used as x-ray photoconductor. In contrast to the conventional diode-based x-ray detectors, phototransistor allows both electrical gating and photodoping effect for efficient carrier density modulation, leading to the low dark-current and high photoconductive gain. The introduction of such high-gain mechanism into x-ray detectors can offer internal signal amplification for photogenerated currents without the increment of noise, thereby leading to the high sensitivity over 10 6 μ C Gy air −1 cm −2 and detection limit down to 3 μ Gy air s −1 . These results suggest that the heterojunction x-ray phototransistor can provide the most promising platform to achieve high-performance direct x-ray detectors with both high sensitivity, light weight, flexibility and low cost.
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