STUDY OF ION IMPLANTATION INTO GAN SUBTRATE AND THIN FILM BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION TECHNIQUE (MOCVD)

In this theoretical and experimental research paper, the study of ion implantation into GaN is studied.The GaN structure is studied and the GaN thin film is made on sapphire (silicon carbide) substrate through metal organic chemical vapor deposition (MOCVD) process.The ion implantation technique is also studied well in this paper, the damages, dislocations and defects produced due to ion implantation, the microstructure analysis of GaN crystal is discussed and application of ion implantation is also given here.