3UCVD deposition SiO2 on SiC wafer and its C-V measurement

The SiO2layer as a gate dielectric is grown on p_type 4H-SiC wafer by means of 3UCVD. Positive oxide charge density only has 1.6×1011cm-2, its result is superior to conventional thermally oxidized process. A new front tofront device with advantages over conventional test structure is used for high_frequ ency C-V measurement.