石墨烯
材料科学
堆积
聚合物
制作
异质结
范德瓦尔斯力
基质(水族馆)
复合材料
热传递
热膨胀
纳米技术
化学工程
光电子学
分子
图层(电子)
有机化学
化学
医学
替代医学
病理
地质学
工程类
海洋学
作者
Teerayut Uwanno,Yoshiaki Hattori,Takashi Taniguchi,Kenji Watanabe,Kosuke Nagashio
出处
期刊:Cornell University - arXiv
日期:2015-01-01
被引量:5
标识
DOI:10.48550/arxiv.1511.07117
摘要
The key to achieve high-quality van der Waals heterostructure devices made of stacking various two-dimensional (2D) layered materials lies in the clean interface without bubbles and wrinkles. Although polymethylmethacrylate (PMMA) is generally used as a sacrificial transfer film due to its strong adhesion property, it is always dissolved in the solvent after the transfer, resulting in the unavoidable PMMA residue on the top surface. This makes it difficult to locate clean interface areas. In this work, we present a fully dry PMMA transfer of graphene onto h-BN using a heating/cooling system which allows identification of clean interface area for high quality graphene/h-BN heterostructure fabrication. The mechanism lies in the utilization of the large difference in thermal expansion coefficients between polymers (PMMA/PDMS) and inorganic materials (graphene/h-BN substrate) to mechanically peel off PMMA from graphene by the thermal shrinkage of polymers, leaving no PMMA residue on the graphene surface. This method can be applied to all types of 2D layered materials.
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