突触可塑性
材料科学
长时程增强
神经形态工程学
神经科学
突触重量
变质塑性
突触疲劳
突触增强
记忆电阻器
突触
人工神经网络
纳米技术
计算机科学
人工智能
电气工程
生物
工程类
受体
生物化学
作者
Jian‐Xin Shen,Dashan Shang,Yisheng Chai,Shouguo Wang,Baogen Shen,Young Sun
标识
DOI:10.1002/adma.201706717
摘要
Artificial synaptic devices that mimic the functions of biological synapses have drawn enormous interest because of their potential in developing brain-inspired computing. Current studies are focusing on memristive devices in which the change of the conductance state is used to emulate synaptic behaviors. Here, a new type of artificial synaptic devices based on the memtranstor is demonstrated, which is a fundamental circuit memelement in addition to the memristor, memcapacitor, and meminductor. The state of transtance (presented by the magnetoelectric voltage) in memtranstors acting as the synaptic weight can be tuned continuously with a large number of nonvolatile levels by engineering the applied voltage pulses. Synaptic behaviors including the long-term potentiation, long-term depression, and spiking-time-dependent plasticity are implemented in memtranstors made of Ni/0.7Pb(Mg1/3 Nb2/3 )O3 -0.3PbTiO3 /Ni multiferroic heterostructures. Simulations reveal the capability of pattern learning in a memtranstor network. The work elucidates the promise of memtranstors as artificial synaptic devices with low energy consumption.
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