电阻随机存取存储器
热离子发射
渗流理论
渗透(认知心理学)
材料科学
凝聚态物理
热传导
空间电荷
普尔-弗伦克尔效应
导电体
电导率
光电子学
电压
物理
量子力学
复合材料
电子
生物
神经科学
作者
Haiqing Qi,Cong Hu,Yanyong Wang,Salamat Ali,Junjie Hu,Na Bai,Qi Wang,Jing Qi,Deyan He
摘要
Resistive random access memory (RRAM) has been intensively investigated for nearly two decades. However, RRAM has not been applied widely in the market because of the poor characteristics, such as reliability and uniformity, which could be improved by the accurate comprehension of the mechanism. In this paper, a model based on percolation theory is proposed to simulate the I-V characteristics of ZnO resistive switching memory. It demonstrates that three different conductions of space charge limited current, Poole–Frenkel effect, and thermionic emission are determined by the relationship between the oxygen vacancy concentration and the bias. Furthermore, this model well explains the effect of conductive filaments' diameter and compliance current on the I-V characteristics of ZnO resistive switching memory, which demonstrates the rationality of the percolation model.
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