Development of laser display red laser device based on single crystal SiC heat sink package

Semiconductor laser devices have the characteristic of small size, high integration and stable requirements, and TO package red semiconductor laser are widely used in laser display application market. Due to the limitations of the electro-optical conversion efficiency of laser devices, the active region will generate over 55% of Joule waste heat under normal operation, and the traditional TO9 packaging form with Aluminum Nitride heat sink is not conducive to the heat dissipation for high power laser application. Therefore, this has become a key factor restricting the stable operation of short wavelength red semiconductor laser devices. In order to improve the heat dissipation problems, this paper developed an upgraded TO packaging type of red wavelength laser device using single-crystal Silicon Carbide (SiC) heat-sink under constant temperature condition. The experimental results show that the output power of TO packaged red laser with self-developed single-crystal SiC heat-sink is significantly higher than that of AlN heat-sink packaged device at high temperatures. The maximum electro-optical conversion efficiency of TO devices contained SiC heat sink is also improved, and the thermal resistance of the package dissipation is effectively reduced.