微尺度化学
热导率
声子
材料科学
热传导
传热
格子Boltzmann方法
玻尔兹曼方程
凝聚态物理
平均自由程
硅
热力学
复合材料
物理
光电子学
光学
数学教育
散射
数学
作者
Yufeng Huang,Chaofeng Hou,Wei Ge
出处
期刊:Physica Scripta
[IOP Publishing]
日期:2022-10-19
卷期号:97 (11): 115703-115703
标识
DOI:10.1088/1402-4896/ac9651
摘要
Abstract The significant self-heating effect severely restricts the performance and reliability of nano-electronic devices. Accordingly, it is very important to understand the process and mechanism of nano/microscale heat transfer for thermal management and thermal design of devices. In this work, we propose a new Lattice Boltzmann Method (LBM) scheme with effective correction of phonon mean free path (MFP) and relaxation time to study phonon heat transfer in silicon thin films and silicon medium with defects, where the correction factor is dependent on the lattice structure of LBM. The transformation analysis of phonon transfer mechanism at different scales shows that the size effect of cross-plane thermal conductivity is more remarkable than that of in-plane thermal conductivity. And the thermal conductivity of silicon medium with defects decreases exponentially as defect density increases. The proposed new LBM scheme can generate more accurate results than the traditional ones in the heat conduction simulations of different nano/microscale structures.
科研通智能强力驱动
Strongly Powered by AbleSci AI